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MicroCT

Bruker High Resolution Micro-Computed Tomography (microCT): Skysan1172

NOTE: This equipment has been moved toÌý. Please contact yongjun.xiao [at] affiliate.mcgill.caÌýfor any information about the equipment.

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XRD 2

Bruker X-ray Diffraction (XRD) Analysis: D8 DISCOVER

Specifications:

• High-performance Cu X-ray sources
• X-ray Optics: monochromatic
• Goniometer and Sample Stage: XYZ, 1/4-Cradle
• Sample Alignment and Monitor: Optical/video microscope, laser/video
• 2D Detector: , the largest 2Theta and Gamma coverage

Applications:

• Enables detailed analysis of any crystalline materials from fundamental research
• Phase identification (Qualitative / Quantitative Analysis)
• Crystal structure determination / Crystalline percentage
• Grazing Incident
• Various solid materials in the forms of powder, bulk and film samples

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XPS

X-ray Photoelectron Spectroscopy (XPS): Thermo Fisher-Scientific Nexsa G2

Specifications:

• X-ray source: Al Kα micro-focused monochromator; spot size (10-400 μm)
• Analyzer: 180° double focusing hemispherical analyzer; 128-channel detector
• Charge compensation: dual beam source; ultra-low energy electron beam
• MAGCIS ion gun: monatomic mode: 500eV – 4keV; cluster mode: 2keV – 8keV, atom size: 75 – 2000
• Sample handling: 60×60mm sample area; 20mm maximum sample thickness
• Data system: Avantage data system

Applications:

• Surface characterization for a variety of solid materials: metals, oxides, polymers, semiconductors, microelectronics, nano and bio-materials
• No special preparation required for powders, fibers, coatings, films, bulk materials
• Element identification with the detection limit of 0.05%
• Chemical state (bond) analysis with high resolution scanning
• Depth profile performed either with monoatomic or cluster ion Ar gun
• Integrated analysis options:
  1. Ultraviolet photoelectron spectroscopy (UPS)
     • Investigation of valence band and highest molecular orbitals (occupied bonding states)
     • Work function measurements of materials
  2. Ion scattering spectroscopy (ISS)
     • Elemental composition (except H) of the 1st atomic layer of a surface
  3. Reflection electron energy loss spectroscopy (REELS)
     • Relative energy levels of unoccupied States.
     • Band gap determination for semiconductor materials.
     • Comparison of relative hydrogen content in polymer materials.
     • Investigation of conjugation or aromaticity in organic materials.
     • Determination of sp² / sp³ hybridisation of carbon
• Rapid XPS imaging
• Tilt module for angle resolved XPS (ARXPS)

SEM

Tescan VEGA 3 XMH

Specifications:

• High vacuum chamber
• Accelerating voltage: 200V – 30KV
• Best resolution: 2nm at 30kV

Applcations:

• This SEM is for imaging and characterization of the samples

Ellipsometer

Spora GES-5E

Specifications:

• All measurements are made automatically as a function of: wavelength, angle of incidence, polarization state and time.
• Standard spectral range is 230-900 nm

Applications:

• GES5E Optical Platform allows various measurement modes from Standard Ellipsometry to generalized Ellipsometry going thru photometric measurements (in Transmission and Reflection), Scatterometry, luminescence measurements.

Optical Profiler

Wyto NT8000

Specifications:

• Optical profiler, with 8mm scan length
• 5x and 50x objectives
• 8" programmable stage
• LED illumination system

Optical Microscope

Olympus MX51

Specification and Application:

• Sample inspection, 5x, 10x, 20x, 50x

Reflectometer

Filmetrix F10-RT

Specifications:

• Thickness range：15nm-70um
• Wavelength range: 380-1050nm

Profilometer

Ambios XP200

Specifications:

• Height range upto 800um
• Scan length upto 55mm support 200mm wafer with vacuum.

Applications:

• A stylus scans the sample surface at a programmable speed, while its position is sampled at small and regular intervals.
• The data is logged and then processed by the application software to extract useful information such as step height, surface roughness and waviness.

Stress Measurement

Flexus 5200

Specifications and Applications:

• The Flexus 5200 Film stress meter system calculates film stresses.
• It optically measures a wafer curvature radius with and without the deposited film; knowing the wafer thickness, the film thickness and the wafer modulus, Stoney's equation yields the film stress.